Valley-polarized quantum anomalous Hall phase in bilayer graphene with layer-dependent proximity effects

Realizations of some topological phases in two-dimensional systems rely on the challenge jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict formation control a fully valley-polarized quantum anomalous Hall effect bilayer graphene, by separately imprinting proximity effects different layers. This results varying spin splittings for conduction valence bands, which gives rise to gap at single Dirac cone. The phase can be controlled gate voltage switched between valleys reversing sign interaction. By performing transport calculations disordered systems, chirality resilience edge state are demonstrated. Our findings provide promising route engineer that could enable low-power electronic devices valleytronic applications as well putting forward layer-dependent graphene way create versatile states matter.